Darlington transistors are compound semiconductor devices formed by connecting two bipolar junction transistors (BJTs) in a single package to achieve very high current gain. In this configuration, the emitter of the first transistor is connected to the base of the second, and their collectors are joined together.
The result is that a very small input current to the first transistor is amplified twice, allowing the Darlington pair to switch or amplify large currents with minimal input.